Motorola VN0300L
TMOS FET Transistor
MAXIMUM RATINGS
Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 — Unit V V Vdc Vpk mA mA mW mW/°C °C 1 2 3 CASE 29–04, STYLE 22 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds Symbol RθJA TL Max 312.5 300 Unit °C/W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS Drain – Source Breakdown Voltage (VDS = 0, ID = 10 µA) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125°C) Gate–Body Leakage (VDS = 0, VGS = ±30 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On–State Drain Cur...