XRF286 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN- PCS/cellular radio and WLL applications. - Specified Two- Tone Performance @ 2000 MHz, 26 Volts Output Power - 60 Watts (PEP) Power Gain - 9.5 d B Intermodulation Distortion - - 28 d Bc - Typical Two- Tone Performance at 2000 MHz, 26 Volts .. Output Power - 60 Watts (PEP) Power Gain - 10.5 d B Efficiency - 32% Intermodulation Distortion - - 30 d Bc - S- Parameter Characterization at High Bias Levels - Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 60 Watts (CW) Output Power - Excellent Thermal Stability - Characterized with Series Equivalent Large- Signal Impedance Parameters MRF286 MRF286S Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE 2000 MHz, 60 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs CASE 465- 04, STYLE 1 (MRF286) CASE 465A- 04, STYLE 1 (MRF286S) MAXIMUM RATINGS Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 240 1.37 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.73 Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. “PILOT PRODUCTION PROTOTYPE (“X” Status)” devices are preproduction products and may not be released or produced in volume. “X” status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice. REV...