Click to expand full text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document from WISD RF Marketing
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9.5 dB Intermodulation Distortion — –28 dBc • Typical Two–Tone Performance at 2000 MHz, 26 Volts www.DataSheet4U.com Output Power — 60 Watts (PEP) Power Gain — 10.
XRF286 Datasheet
