MRF7S19100NR1
MRF7S19100NR1 is RF Power Field Effect Transistors manufactured by Motorola Semiconductor.
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Freescale Semiconductor Technical Data
Document Number: MRF7S19100N Rev. 1, 6/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN
- PCS/cellular radio and WLL applications.
- Typical Single
- Carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain
- 17.5 dB Drain...
