MS2H32120G1 Overview
MS2H32120G1 MS2H32120G1 1200V Silicon Carbide Diode.
MS2H32120G1 Key Features
- 1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperatur
- Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency pared to Silicon