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MS2H32120G1 - 1200V Silicon Carbide Diode

Key Features

  • -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses.

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Datasheet Details

Part number MS2H32120G1
Manufacturer Msemitek
File Size 723.59 KB
Description 1200V Silicon Carbide Diode
Datasheet download datasheet MS2H32120G1 Datasheet

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MS2H32120G1 MS2H32120G1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Package Type : TO-247-3Lead ACA PIN 1 PIN 2 PIN 3 Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter VRRM Repetitive Peak Rev