Datasheet Details
| Part number | SLD100N03T |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.07 MB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 SLD100N03T Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - N-Channel:30V 100A RDS(on)Typ= 3.2mΩ@VGS = 10 V RDS(on)Typ= 4.5mΩ@VGS =4.5 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability G S D D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche E.