Datasheet Summary
30V N-Channel MOSFET
General Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Features
- 89A, 30V, RDS(on)typ = 3.5mΩ@VGS = 10 V RDS(on)typ = 5.5mΩ@VGS = 4.5V
- Low gate charge
- Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-252...
