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SLN80N03T - 30V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - N-Channel:30V 80A RDS(on)Typ= 4.5mΩ@VGS = 10 V RDS(on))Typ= 6.8mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability DD DD D DD D D DFN3.
  • 3 G S S SG GSSS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Volt.

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Datasheet Details

Part number SLN80N03T
Manufacturer Msemitek
File Size 1.00 MB
Description 30V N-Channel MOSFET
Datasheet download datasheet SLN80N03T Datasheet

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SLN80N03T SLN80N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application Load Switch Power Management Features - N-Channel:30V 80A RDS(on)Typ= 4.5mΩ@VGS = 10 V RDS(on))Typ= 6.8mΩ@VGS = 4..