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SLP12N65SV - 650V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 12A, 650V, RDS(on)Type=0.64Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter SLP12N65SV SLF12N65SV VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) A.

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Datasheet Details

Part number SLP12N65SV
Manufacturer Msemitek
File Size 921.91 KB
Description 650V N-Channel MOSFET
Datasheet download datasheet SLP12N65SV Datasheet

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SLP12N65SV / SLF12N65SV SLP12N65SV / SLF12N65SV 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 12A, 650V, RDS(on)Type=0.