Datasheet Details
| Part number | SLP150N06T |
|---|---|
| Manufacturer | Msemitek |
| File Size | 961.47 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 SLP150N06T Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 150A, 60V, RDS(on)Typ = 3.1mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220C SLP150N06T D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD RθJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (.