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SLP7N70S - 700V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - N-Channel:700V 7A RDS(on)Typ= 1.3Ω@VGS = 10 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220C G D S TO-220F D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD7N70S / SLU7N70S VDSS Drain-Source Voltage 700 Drain Current - Continuous (TC = 25℃) 7 ID - Continuous (TC = 100℃) 4.2 IDM Drain Current - Pulsed (Note 1) 28 VGSS Gate-Source Voltage ±30 EAS Single Pulse.

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Datasheet Details

Part number SLP7N70S
Manufacturer Msemitek
File Size 655.75 KB
Description 700V N-Channel MOSFET
Datasheet download datasheet SLP7N70S Datasheet

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SLP7N70S / SLF7N70S SLP7N70S / SLF7N70S 700V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - N-Channel:700V 7A RDS(on)Typ= 1.