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SLV2302B - 20V N-Channel MOSFET

Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - N-Channel: 20V 3.5A RDS(on)Typ=34.5mΩ@VGS = 4.5 V RDS(on))Typ= 46mΩ@VGS = 2.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - Improved dv/dt capability D SOT-23 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS PD R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 70℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Power Dissipation (TC = 25℃) Thermal Resistance, Juncti.

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Datasheet Details

Part number SLV2302B
Manufacturer Msemitek
File Size 708.79 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet SLV2302B Datasheet
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Full PDF Text Transcription

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SLV2302B SLV2302B 20V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application  PWM Application  Load Switch  Power Management Features - N-Channel: 20V 3.5A RDS(on)Typ=34.5mΩ@VGS = 4.5 V RDS(on))Typ= 46mΩ@VGS = 2.
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