SLV3401T Datasheet | Msemitek

Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Application  PWM Application  Load Switch  Power Management Features - P-Channel: -30V -4.2A RDS(on)Typ=44mΩ@VGS = -4.5 V RDS(on))Typ= 54mΩ@VGS = -2.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - Improved dv/dt capability SOT-23 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS IDM VGSS PD R θJA TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Power Dissipation (TC = 25℃) Thermal Resistance, Junction-to-Ambient Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds SLV3401T -30 -4.2 -2.7 -25 ±20 1.25 100 -55 to +150 Units V A A A V W ℃/W ℃ ℃ - Drain current limited by maximum junction temperature. Msemitek Co., Ltd http://.msemitek. Downloaded From Oneyac. Rev2.0 Jun...