TMR1309 Datasheet | MultiDimension

Description TMR1309 is a digital omnipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and ultra-low power consumption. It is designed for use in applications that are both power-critical and performance-demanding. It contains a push-pull half-bridge TMR magnetic sensor and CMOS signal processing circuitry within the same package, including an on-chip TMR voltage generator for precise magnetic sensing, a TMR voltage amplifier and parator plus Schmitt trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal band gap regulator is used to provide a temperature pensated supply voltage for internal circuits, permitting a wide range of supply voltages. The TMR1309 draws only 1.5μA resulting in ultra-low power operation. It has fast response, accurate switching points, excellent thermal stability, and immunity to stray field interference. It is available in the SOT23-3 package. Features and Benefits - Tunneling Magnetoresistance (TMR) Technology - Ultra Low Power Consumption at 1.5u A - High Frequency Response > 1k Hz - Operation with North or South Pole - Very Low Switching Points for Ultra High Sensitivity - patible with a Wide Range of Supply Voltages - Excellent Thermal Stability - High Tolerance to External Magnetic Field Interference Applications - Proximity Switches - Position and Speed Sensing - Open/close switch for portable devices TMR1309S Block Diagram 1/5 Pin Configuration Datasheet V1.2 SOT23-3 Pin Name VCC VOUT GND Pin No. 1 2 3 Pin Function Supply Voltage Output Ground Absolute Maximum Ratings Parameter Supply Voltage Reverse Supply Voltage Output Current Magnetic Flux Density ESD level(HBM) Operating Ambient Temperature Storage Temperature Symbol VCC VRCC IOUTSINK B VESD TA Tstg Limit 7 0.3 9 2800 4 -40 ~125 -50 ~ 150 Electrical Characteristics (VCC=3.0V, TA=25°C) Parameter Symbol Conditions...