1165892 Description
1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
1165892 Key Features
- Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc
- Pb-free packages
- 1.050 (26.67)
- 0.830 (21.08)