DESCRIPTION
: This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. ABSOLUTE MAXIMUM RATINGS
: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, lC Total Device Dissipation (TA= +25°C), PD Derate above 25°C Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA Lead Temperature (During Soldering, 1/16" from case, 60sec Max.), TL : 120V : 80V : 7V : 0.5A : 800mW : 4.6mW/°C : 3W : 17.2mW/°C : -65°C to +200°C : -65°C to +200°C : 16.5°C/W : 219°C/W : 300°C Pin Configuration: 1. Emitter 2. Base 3. Collector
Multicomp
