2N2218A Datasheet PDF

DESCRIPTION

: A Silicon NPN transistor in a TO-39 case intended for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS

: Collector-Base Voltage, Vcbo Collector-Emitter Voltage, Vceo Emitter-Base Voltage, Vebo Continuous Collector Current, Ic Total Device Dissipation (Tc = +25ºC), PD Derate above 25ºC Total Device Dissipation (Ta = + 25ºC), Pd Derate above 25ºC Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg : 75V : 40V : 6V : 800mA : 1.2W : 6.85mW/ºC : 400mW : 2.28mW/ºC : -65ºC to +200 ºC : -65ºC to 200ºC

ELECTRICAL CHARACTERISTICS

: (Ta = +25ºC Unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Base Cut-Off Current On Characteristics DC Curent Gain Collector-Emitter Saturation Voltage ( Note 1) Base-Emitter Saturation Voltage (Note 1) Symbol Test Conditio