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Bipolar Transistor
Description:
A Silicon NPN transistor in a TO-39 case intended for high speed switching applications.
Absolute Maximum Ratings:
Collector-Base Voltage, Vcbo Collector-Emitter Voltage, Vceo Emitter-Base Voltage, Vebo Continuous Collector Current, Ic Total Device Dissipation (Tc = +25ºC), PD Derate above 25ºC Total Device Dissipation (Ta = + 25ºC), Pd Derate above 25ºC Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg
: 75V : 40V : 6V : 800mA : 1.2W : 6.85mW/ºC : 400mW : 2.