Datasheet4U Logo Datasheet4U.com

2N2222 Datasheet Low Power Bipolar Transistors

Manufacturer: Multicomp

Overview: 2N2222 Low Power Bipolar Transistors.

Datasheet Details

Part number 2N2222
Manufacturer Multicomp
File Size 135.30 KB
Description Low Power Bipolar Transistors
Datasheet 2N2222-Multicomp.pdf

General Description

Symbol 2N2222 Collector Emitter Voltage VCEO 30 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO 5 Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C IC 800 500 PD 2.28 1.2 6.85 Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 Unit V mA mW mW/°C W mW/°C °C Electrical Characteristics (Ta = 25°C unless specified otherwise) Description Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Symbol BVCEO BVCBO VEBOf Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 Value Minimum Maximum 30 - 60 - 5- Collector Leakage Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage ICBO VCB = 50V, IE = 0 VCB = 50V, IE = 0 Ta = 150°C *VCE (Sat) *VBE (Sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA - 0.6 10 10 0.4 1.6 1.3 2.6 Unit V nA µA V Page 2 06/04/06 V1.0 2N2222 Low Power Bipolar Transistors Electrical Characteristics (Ta = 25°C unless specified otherwise) Parameter Symbol Test Condition 2N2222 Minimum Maximum DC Current Gain IC = 0.1mA, VCE = 10V* IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V* hFE IC = 150mA, VCE = 1V* IC = 150mA, VCE = 1V* IC = 500mA, VCE = 10V* 35 50 75 50 100 30 300 Unit - Dynamic Characteristics Transition Frequency Output

Key Features

  • NPN Silicon Planar Switching Transistors.
  • Switching and Linear.

2N2222 Distributor & Price

Compare 2N2222 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.