Multicomp 2N3055H
The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head positioners and other linear application. These devices can also be used in power switching circuits such as converters or inverters.FEATURES
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● Higher safe operating area than 2N3055 at VCE >40V.
● Low saturation voltages.
● High power dissipation capability. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres NPN 2N3055H 15 Ampere NPN Silicon Transistors 60 Volts 115 Watts TO-3
MAXIMUM RATINGS
Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCBO VEBO IC IB PD TJ, TSTG Rating 60 70 100 7.0 15 7.0 115 0.657 -65 to +200 Unit V A W W/°C °C Page 1 31/05/05 V1.0 2N3055H 15A Power Transistors Thermal Characteristics Characteristic Thermal Resistance Junction to Case Figure 1 - Power Derating Symbol Rθjc Maximum 1.52...