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2N4234 - Bipolar Transistor

General Description

This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications.

Key Features

  • high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Storage Temperature Range, Thermal Resistance, Junction-to-Case, Lead Temperature (During Soldering,1/16.

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Datasheet Details

Part number 2N4234
Manufacturer Multicomp
File Size 216.89 KB
Description Bipolar Transistor
Datasheet download datasheet 2N4234 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistor Collector 3 2 Base 1 Emitter Description: This is a silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Storage Temperature Range, Thermal Resistance, Junction-to-Case, Lead Temperature (During Soldering,1/16" from case, 60 sec max) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC TL Rating 40 7 1 1 5.