2N4920 Datasheet PDF

DESCRIPTION

: Medium Power Plastic PNP, TO-126, Silicon Transistor. Designed for driver circuits, switching, and amplifier applications.

FEATURES

:
● Low Saturation Voltage: VCE(sat) 0.6V DC IC = 1A
● Excellent Power Dissipation Due to Thermopad Construction PD = 30 @ TC = 25°C

ABSOLUTE MAXIMUM RATINGS

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD Rating 80 80 5 1 1 30 0.24 Unit V A W mW/°C Tj, Tstg -65 to +150 °C PNP

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise specified) Parameter OFF Characteristics Collector - Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics (Note 1) Symbol V(BR)CEO ICEX ICEO ICBO IEBO Test Conditions IC=100mA, IB=0 VCE=80V, VEB(off)=1.5V VCB