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2N4920 - Medium Power Transistor

General Description

Medium Power Plastic PNP, TO-126, Silicon Transistor.

Designed for driver circuits, switching, and amplifier applications.

Key Features

  •   Low Saturation Voltage: VCE(sat) 0.6V DC IC = 1A.
  •   Excellent Power Dissipation Due to Thermopad Construction PD = 30 @ TC = 25°C Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD Rating 80 80 5 1 1 30 0.24 Unit V A W mW/°C Tj, Tstg -65 to +.

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Datasheet Details

Part number 2N4920
Manufacturer Multicomp
File Size 201.02 KB
Description Medium Power Transistor
Datasheet download datasheet 2N4920 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Medium Power Transistor Description: Medium Power Plastic PNP, TO-126, Silicon Transistor. Designed for driver circuits, switching, and amplifier applications. Features: •  Low Saturation Voltage: VCE(sat) 0.6V DC IC = 1A •  Excellent Power Dissipation Due to Thermopad Construction PD = 30 @ TC = 25°C Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD Rating 80 80 5 1 1 30 0.