DESCRIPTION
: Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits MAXIMUM RATINGS
: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 40 5 4 1 40 320 -65 to +150 Unit V A W mW/°C °C Page <1> 23/04/13 V1.0 Bipolar Transistor ELECTRICAL CHARACTERISTICS
(TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICEX ICBO ICEO IEBO IC = 0.1A, IB = 0 VCE = 40VEB(off) = 1.5V VCB = 40V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 DC Current Gain (Note 1) hFE Collector - Emitter Saturation Voltage (Note 1) Base - Emitter on Voltage (Note 1) Small Signal...
Multicomp
