Datasheet Details
| Part number | 2N5193 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 188.92 KB |
| Description | Bipolar Transistor |
| Datasheet | 2N5193-Multicomp.pdf |
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Overview: Bipolar Transistor NPN Collector 3 2 Base 1 Emitter.
| Part number | 2N5193 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 188.92 KB |
| Description | Bipolar Transistor |
| Datasheet | 2N5193-Multicomp.pdf |
|
|
|
: Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 40 5 4 1 40 320 -65 to +150 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICEX ICBO ICEO IEBO IC = 0.1A, IB = 0 VCE = 40VEB(off) = 1.5V VCB = 40V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 DC Current Gain (Note 1) hFE Collector - Emitter Saturation Voltage (Note 1) Base - Emitter on Voltage (Note 1) Small Signal Characteristics VCE(sat) VBE(on) VCE = 2V, IC = 1.5A VCE = 2V, IC = 4A IC = 1.5A, IB = 0.15A IC = 4A, IB = 1A IC = 1.5A, IB = 2V Current Gain-Bandwidth Product (Note 2) fT VCE = 10V, IC = 1A, f = 1MHz Note 1 : Pulse Test : Pulse Width % 300µs, Duty Cycle % 2% Note 2 : fT is defined as the frequency at which |hfe| extrapolates to unity Min.
Max.
Unit 40 - V 0.1 - mA 1 25 100 - 10 - 0.6 - 1.4 V 1.2 2 - MHz Dimensions Min.
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2N5193 | PNP SILICON POWER TRANSISTORS | Central |
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2N5193 | PNP SILICON POWER TRANSISTORS | Central Semiconductor |
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2N5193 | Silicon PNP Power Transistors | SavantIC |
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