2N5193 Datasheet | Multicomp

Description : Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO l C IB PD TJ Tstg Rating 5 4 1 40 320 -65 to +150 Unit A W m W/°C °C .element14. .farnell. .newark. Page <1> 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICEX ICBO ICEO IEBO IC = 0.1A, IB = 0 VCE = 40VEB(off) = 1.5V VCB = 40V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 DC Current Gain (Note 1) h FE Collector - Emitter Saturation Voltage (Note 1) Base - Emitter on Voltage (Note 1) Small Signal Characteristics VCE(sat) VBE(on) VCE = 2V, IC = 1.5A VCE = 2V, IC = 4A IC = 1.5A, IB = 0.15A IC = 4A, IB = 1A IC = 1.5A, IB = 2V Current Gain-Bandwidth Product (Note 2) f T VCE = 10V, IC = 1A, f =...