Overview: Power Transistor Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C)
Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range NPN
Collector 3
2 Base
1 Emitter Symbol VCBO VCEO VEBO lC IB
PD
TJ Tstg Rating 70 80 5 7 3 40
-65 to +150 Unit
V
A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 24/04/13 V1.0 Power Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICEX ICEO IEBO IC = 100mA, IB = 0 VCE = 80V, VEB(off) = 1.5V
VCB = 60V, IB = 0 VEB = 5V, IC = 0 DC Current Gain (Note 1)
Collector - Emitter Saturation Voltage (Note 1) Base - Emitter on Voltage (Note 1) Small Signal Characteristics hFE
VCE(sat) VBE(on) VCE = 4V, IC = 2A VCE = 4V, IC = 7A IC = 7A, IB = 3A IC = 7A, VCE = 4V Current Gain-Bandwidth Product (Note 2) Output Capacitance Small-Signal Current Gain fT CObO
hfe VCE = 4V, IC = 500mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz VCE = 4V, IC = .5A, f = 50MHz Note 1 : Pulse Test : Pulse Width %300µs, Duty Cycle %2% Note 2 : fT is defined as the frequency at which |hfe| extrapolates to unity Min. Max. Unit 70 - V 100 µA - 1 mA 30 150 - 2.3 - - 3.5 V 3 4 - MHz - 250 pF - 0.3 Ω Pin Configuration: 1 Base 2 Collector 3. Emitter 4. Collector Dimensions Min. Max. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.9 E 1.15 1.4 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J - 0.56 K 12.7 14.73 L 2.8 4.07 M 2.03 2.92 N - 31.
