Multicomp 2N6476
The 2N6476, PNP General Purpose, medium power silicon transistor in a TO-220 type package designed for switching and amplifier applications. This devices is especially designed for series and shunt regulators and as a driver and output stage of high-fidelity amplifiers.DESCRIPTION
:FEATURES
:● Low Saturation Voltage
MAXIMUM RATINGS
: Characteristic Collector-Base Voltage Collector-Emitter Voltage (RBB = 1≤00Ω, VBB = 0) Collector-Emitter Voltage Emitter Base Current Continuous Collector Current (TC% + 106°C) Continuous Base Current (TC% + 130°C) Total Device Dissipation -(TC = +100°C), Derate Linearly Above 100°C Total Device Dissipation -(TC = +25°C), Derate Linearly Above 25°C Total Device Dissipation -(TA = +25°C), Derate Linearly Above 25°C Operating Junction Temperature Range Storage Temperature Range, Lead Temperature (During Soldering, 1/8" (3.17mm) from case, 10sec max) Symbol VCBO VCEX VCEO VEBO IC IB PD Topr Tstg TL Rating 130 120 5