Datasheet Details
| Part number | 2N6476 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 240.22 KB |
| Description | Bipolar Transistor |
| Datasheet |
 2N6476 Datasheet
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General Description
The 2N6476, PNP General Purpose, medium power silicon transistor in a TO-220 type package designed for switching and amplifier applications.
This devices is especially designed for series and shunt regulators and as a driver and output stage of high-fidelity amplifiers.
Key Features
- Low Saturation Voltage Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage (RBB = 1≤00Ω, VBB = 0) Collector-Emitter Voltage Emitter Base Current Continuous Collector Current (TC% + 106°C) Continuous Base Current (TC% + 130°C) Total Device Dissipation -(TC = +100°C), Derate Linearly Above 100°C Total Device Dissipation -(TC = +25°C), Derate Linearly Above 25°C Total Device Dissipation -(TA = +25°C), Derate Linearly Above 25°C Operating Junction Temperatur.