2N6499
2N6499 is Bipolar Transistor manufactured by Multicomp.
Description
:
A Silicon NPN transistor in a T0-220 type package designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch-mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits
Maximum Ratings:
Characteristic
Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous
- Peak Base Current - Continuous
- Peak Total Power Dissipation (TC = +25°C),
Derate Above 25°C Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-case Lead Temperature (During Soldering, ⅛" from case, 5 sec)
Symbol VCEO(sus)
VCBO l C l B
PD TJ Tstg Rthjc TL
Rating 350 6 5 10 2 12 80 640
-65 to +150
1.56 +275
Unit V
W m W/°C
°C °C/W
°C
.element14. .farnell. .newark.
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29/04/13 V1.0
Bipolar Transistor
Electrical Characteristics (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 1)
Collector
- Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain
Collector
- Emitter Saturation Voltage
Base
- Emitter Saturation Voltage Dynamic Characteristics
VCEO(sus) ICEV IEBO h FE VCE(sat) VBE(sat)
IC = 25m A, IB = 0 VCEV = 450V, VBE(off) = 1.5V VCEV = 225V, VBE(off) = 1.5V TC = 100°
VEB = 6V, IC = 0
- 10V, IC = 2.5A...
