Datasheet Details
| Part number | BC177 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 138.07 KB |
| Description | Low Power Bipolar Transistors |
| Datasheet | BC177-Multicomp.pdf |
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Overview: BC177/BC177B Series Low Power Bipolar Transistors Feature: • PNP Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 21/04/06 V1.
| Part number | BC177 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 138.07 KB |
| Description | Low Power Bipolar Transistors |
| Datasheet | BC177-Multicomp.pdf |
|
|
|
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Rth (j-c) BC177 45 50 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 175 Unit V A W mW/°C °C °C/W Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Collector-Cut off Current Symbol ICES Test Condition VCE = 20V, IE = 0 Tamb = 125°C VCE = 20V, IE = 0 Minimum - Collector-Base Voltage VCBO IC = 10µA, IE = 0 50 Typical - Collector-Emitter Voltage VCEO IC = 2mA, IB = 0 45 - Emitter-Base Voltage VEBO IE = 10µA, IC = 0 5.0 - Maximum 100 4.0 - - Unit nA µA V V V DC Current IC = 2mA, VCE = 5V hFE BC177 120 B Group 180 Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VCE (Sat) VBE (Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA - Base Emitter On Voltage VBE (on) IC = 2mA, VCE = 5V 0.60 - 0.90 - 460 460 0.20 0.60 0.80 - 0.75 V Page 2 21/04/06 V1.0 BC177/BC177B Series Low Power Bipolar Transistors Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition Minimum Collector Knee Voltage Transition Frequency Noise Figure VCE (K) ft IC = 10mA, IB = The value for which IC = 11mA at VCE = 1V VCE = 5V, IC = 10mA, f = 50MHz VCE = 5V, IC = 0.2mA NF Rg = 2kΩ F = 1kHz,B = 20
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BC177 | SILICON PNP TRANSISTORS | Central Semiconductor |
 |
BC177 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
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BC177 | PNP Transistor | Philipss |
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BC177 | LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS | STMicroelectronics |
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BC177 | GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR | Seme LAB |
| Part Number | Description |
|---|---|
| BC177B | Low Power Bipolar Transistors |
| BC107 | Low Power Bipolar Transistors |
| BC107A | Low Power Bipolar Transistors |
| BC107B | Low Power Bipolar Transistors |
| BC108 | Low Power Bipolar Transistors |
| BC108B | Low Power Bipolar Transistors |
| BC108C | Low Power Bipolar Transistors |
| BC109 | Low Power Bipolar Transistors |
| BC109B | Low Power Bipolar Transistors |
| BC109C | Low Power Bipolar Transistors |