Multicomp BCX55
NPN Silicon AF Transistor
FEATURES
:● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
● Complementary types:BCX51/BCX52/BCX53
MAXIMUM RATINGS
Parameter Collector - Base Voltage - BCX54 - BCX55 - BCX56 Collector - Emitter Voltage - BCX54 - BCX55 - BCX56 Emitter - Base Voltage Collector Current - Continuous Collector Current - Peak Base Current Peak Base Current Total Power Dissipation, TS=130°C Junction and Storage Temperature Collector 3 1 Base 2 Emitter Pin Configuration: 1. Base 2. Emitter 3. Collector Symbol VCBO VCEO Vebo IC ICM IB IBM PTOT Tj, Tstg Value -45 -60 -100 -45 -60 -80 5 1 1.5 100 200 500 -65 to +150 Unit V A mA mW °C Page <1> 29/04/13 V1.0 NPN Silicon AF TransistorELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted) Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emmiter - Base Breakdown Vol