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BZV55C10 - Zener Diode

Description

Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange = 50ºC Up to Ta = 50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t = 100µs, Tj = 150ºC Storage Temperature Junc

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Datasheet Details

Part number BZV55C10
Manufacturer Multicomp
File Size 278.20 KB
Description Zener Diode
Datasheet download datasheet BZV55C10 Datasheet

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Zener Diode Silicon Planar Zener Diodes Feature: • Hermetically sealed, glass silicon diodes. Absolute Maximum Ratings (Ta=25°C) Description Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange = 50ºC Up to Ta = 50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t = 100µs, Tj = 150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Symbol IF(av) IFRM Ptot Ptot PZSM Tstg Tj Rth (j-tp) Rth (j-a) Value 250 250 500 400 30 - 65 to +200 200 0.3 0.38 Unit mA mW W ºC K/mW Page 1 25/04/08 V1.
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