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BZV55C11 Datasheet Zener Diode

Manufacturer: Multicomp

Overview: Zener Diode Silicon Planar Zener Diodes Feature: • Hermetically sealed, glass silicon diodes.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange = 50ºC Up to Ta = 50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t = 100µs, Tj = 150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Symbol IF(av) IFRM Ptot Ptot PZSM Tstg Tj Rth (j-tp) Rth (j-a) Value 250 250 500 400 30 - 65 to +200 200 0.3 0.38 Unit mA mW W ºC K/mW Page 1 25/04/08 V1.1 Zener Diode Electrical Characteristics (Ta = 25°C unless specified otherwise) Working Voltage* +/- 5% VZ (V) at IZtest= 5mA Differential * Resistance rdiff(Ω) at IZtest = 5mA Temperature Coefficient Sz(mV/K) at IZtest = 5mA Differential Resistance rdiff(Ω) at IZtest = 1mA IR at Ta 25ºC (µA) Minimum Maximum 9.4 10.6 10.4 11.6 11.4 12.7 12.4 14.1 13.8 15.6 15.3 17.1 16.8 19.1 18.8 21.2 20.8 23.3 22.8 25.6 at IZtest = 2mA 25.1 28,9 28 32 31 35 34 38 3.4 3.8 3.7 4.1 40 46 44 50 4 4.6 4.4 5 48 54 4.8 5.4 5.2 6 5.8 6.6 7 7.9 7.7 8.7 8.5 9.6 Maximum 20 20 25 30 30 40 45 55 55 70 at IZtest = 2mA 80 80 80 90 90 90 150 170 90 80 180 60 40 10 15 15 15 Minimum Maximum 4.5 8 5.4 9 6 10 7 11 9.2 13 10.4 14 12.4 16 14.4 18 16.4 20 18.4 22 at IZtest = 2mA 21.4 25.3 24.4 29.4 27.4 33.4 30.4 37.4 -3.5 0 -3.5 0 37.6 46.6 42 51.8 -3.5 0 -3.5 0.2 46.6 57.2 -2.7 1.2 -2 2.5 0.4 3.7 2.5 5.3 3.2 6.2 3.8 7 Maximum 150 150 150 170 200 200 225 225 250 250 at IZtest = 0.5mA 300 300 325 350 600 600 375 375 600 500 400 480 400 150 80 80 100 Maximum 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 5 3 0.05 0.05 3 3

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