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MJE15029 - Bipolar Transistor

General Description

Plastic PNP TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/ converters and m

Key Features

  •   Very low collector saturation voltage.
  •   Excellent linearity.
  •   Fast switching Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC IB PD Rating 45 45 5 10 2 50 0.4 Tj, Tstg -55 to +150 Unit V A A W W/°C °C PNP Emitter 3 2 Collector 1 Base Pi.

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Datasheet Details

Part number MJE15029
Manufacturer Multicomp
File Size 199.47 KB
Description Bipolar Transistor
Datasheet download datasheet MJE15029 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistor Description: Plastic PNP TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/ converters and many others. Features: •  Very low collector saturation voltage •  Excellent linearity •  Fast switching Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC IB PD Rating 45 45 5 10 2 50 0.