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MJE172 Datasheet PDF

Multicomp MJE172

This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it.
Part No. MJE172
Datasheet MJE172 Download
Manufacturer
Multicomp
Description Low Power Transistor
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MJE172 datasheet page 1 preview

DESCRIPTION

: Plastic, PNP, Silicon Power Transistorin A TO-126 PK Designed for low power audio amplifier and low current, high speed switching.

ABSOLUTE MAXIMUM RATINGS

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD Tj, Tstg Rating 80 100 7 3 1.5 0.012 -65 to +150 Unit V A W W/°C °C PNP Collector 3 2 Base 1 Emitter

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector - Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICBO IEBO IC=10mA, IB=0 VCB=100V, IB=0 VEB=7V, IC=0 DC Current Gain Collector - Emitter Saturation Voltage hFE VCE(sat) VCE=1V, IC=100mA VCE=1V, IC=500mA VCE=1V, IC=1.5A IC=500mA, IB=50mA IC=1.5A, IB=150mA Base - Emitter Saturation Voltage Base-Emitter On Voltage VCE(sat) VBE(on) IC=1.5A, IB=150mA IC=3A, IB=600mA IC=500mA, VCE=1V Min.
MJE172 page 2 preview