Multicomp SD103ATW-7-F
Schottky Barrier Diode
FEATURES
:● Low Forward Voltage Drop
● Guard Ring Construction for Transient Protection
● Fast Switching
● Low Leakage Current
● Three Fully Isolated Schottky Diode
● Also Available in Lead Free Version
APPLICATIONS
: High speed switching Maximum Rating @ Ta = 25°C unless otherwise specified Parameter Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward continuous current (Max.) Average rectified current Non-Repetitive peak forward surge current @t ≤ 10ms Thermal resistance, junction to ambient air Power dissipation Junction and storage temperature Symbol VRRM VRWM VR VR(RMS) IF IO IFSM RθJA PD Tj, Tstg SD103ATW-7-F 40 28 350 175 1 500 200 -55 to +125ELECTRICAL CHARACTERISTICS
@ Ta = 25°C unless otherwise specified Parameter Reverse breakdown voltage Average reverse current Symbol V(BR)R IR Conditions IR = 100μA VR = 10V VR = 30V Min. 40 Typ. 0.2 0.4