Description
A silicon PNP Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications.
Features
- High DC Current Gain.
- Monolithic Construction with Built-in Base-Emitter
Shunt Resistors
PNP
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Continuous Collector Current Peak Total Device Dissipation at Tc = 25°C Derate above 25°C Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (Note.