TIP116 Datasheet PDF

DESCRIPTION

: A silicon PNP Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications.

FEATURES

:
● High DC Current Gain
● Monolithic Construction with Built-in Base-Emitter Shunt Resistors PNP

ABSOLUTE MAXIMUM RATINGS

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Peak Total Device Dissipation at Tc = 25°C Derate above 25°C Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Symbol VCEO VCBO VEBO IC PD PD Rating 80 80 5 4 6 50 0.4 2 0.016 Unit V A W mW/°C Tj, Tstg RthJC RthJA -65 to +120 °C 2.5 °C/W 62.5 Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise specified) Parameter Symbol Test Conditions OFF C