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TIP116 - General Purpose Transistor

General Description

A silicon PNP Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications.

Key Features

  •   High DC Current Gain.
  •   Monolithic Construction with Built-in Base-Emitter Shunt Resistors PNP Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Peak Total Device Dissipation at Tc = 25°C Derate above 25°C Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note.

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Datasheet Details

Part number TIP116
Manufacturer Multicomp
File Size 205.71 KB
Description General Purpose Transistor
Datasheet download datasheet TIP116 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Purpose Transistor Description: A silicon PNP Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications. Features: •  High DC Current Gain •  Monolithic Construction with Built-in Base-Emitter Shunt Resistors PNP Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Peak Total Device Dissipation at Tc = 25°C Derate above 25°C Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Symbol VCEO VCBO VEBO IC PD PD Rating 80 80 5 4 6 50 0.4 2 0.016 Unit V A W mW/°C Tj, Tstg RthJC RthJA -65 to +120 °C 2.