- Part: TIP29A
- Description: High Power Bipolar Transistors
- Category: Transistor
- Manufacturer: Multicomp
- Size: 393.07 KB
Key Features
- Collector-Emitter sustaining voltage- VCEO (sus) = 60 V (Minimum) - TIP29A, TIP30A = 100 V (Minimum) - TIP29C, TIP30C
- Collector-Emitter saturation voltage- VCE (sat) = 0.7 V (Maximum) at IC = 1 A
- Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA Pin
- Collector
- Emitter
- Collector (Case) Dimensions A B C
- E F G H I J K L M O
Datasheets by Manufacturer
- TIP29A — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
- TIP2955 — Power Innovations Limited — PNP SILICON POWER TRANSISTOR
- TIP29C — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
- TIP29C — Rectron — Power Transistors
- TIP29D — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- TIP29 — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
- TIP29B — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
- TIP29E — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- TIP29F — Power Innovations Limited — NPN SILICON POWER TRANSISTORS
- TIP2955 — Wing Shing Computer Components — PNP PLANAR SILICON TRANSISTOR
