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150KR80 - SILICON POWER DIODE

Download the 150KR80 datasheet PDF. This datasheet also covers the 150K10 variant, as both devices belong to the same silicon power diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Diffused Series.
  • Available in Normal & Reverse Polarity.
  • Industrial Grade.
  • Available In Avalanche Characteristic.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (150K10_NAINASEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 150KR80
Manufacturer NAINA SEMICONDUCTOR
File Size 110.44 KB
Description SILICON POWER DIODE
Datasheet download datasheet 150KR80 Datasheet

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Other Datasheets by NAINA SEMICONDUCTOR

Part Number Description
150KR10 SILICON POWER DIODE
150KR100 SILICON POWER DIODE
150KR120 SILICON POWER DIODE
150KR140 SILICON POWER DIODE
150KR160 SILICON POWER DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
45L/150K SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 150A 1.4V 3570A 750A 64,000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.DataSheet4U.com Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 0.250C/W -650C to 1500C -650C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.