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1N3297 - (1N3288 - 1N3297) SILICON POWER DIODE

This page provides the datasheet information for the 1N3297, a member of the 1N3288 (1N3288 - 1N3297) SILICON POWER DIODE family.

Datasheet Summary

Features

  • Diffused Series.
  • Available in Normal & Reverse Polarity.
  • Industrial Grade.
  • Available In Avalanche Characteristic.

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Datasheet preview – 1N3297

Datasheet Details

Part number 1N3297
Manufacturer NAINA SEMICONDUCTOR
File Size 109.67 KB
Description (1N3288 - 1N3297) SILICON POWER DIODE
Datasheet download datasheet 1N3297 Datasheet
Additional preview pages of the 1N3297 datasheet.

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Other Datasheets by NAINA SEMICONDUCTOR
  • 1N3290 - (1N3288 - 1N3297) SILICON POWER DIODE
  • 1N3291 - (1N3288 - 1N3297) SILICON POWER DIODE
  • 1N3292 - (1N3288 - 1N3297) SILICON POWER DIODE
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  • 1N3295 - (1N3288 - 1N3297) SILICON POWER DIODE
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Full PDF Text Transcription

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1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 100A 1.5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.DataSheet4U.com Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 0.400C/W -650C to 1500C -65 0C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.
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