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AQV234 - PhotoMOS RELAYS

Key Features

  • 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx. 1 µV) 5. Extremely low closed-circuit offset voltages to enable control of small analog signals without distortion 6. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side 7. Stable on resista.

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Datasheet Details

Part number AQV234
Manufacturer NAiS
File Size 40.96 KB
Description PhotoMOS RELAYS
Datasheet download datasheet AQV234 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS (High Sensitivity) Type [1-Channel (Form A) Type] PhotoMOS RELAYS 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.6±0.2 .142±.008 mm inch 16 25 34 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx. 1 µV) 5. Extremely low closed-circuit offset voltages to enable control of small analog signals without distortion 6. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side 7. Stable on resistance to help simplify circuit design 8.