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AQV234AZ - PhotoMOS RELAYS

Download the AQV234AZ datasheet PDF. This datasheet also covers the AQV234 variant, as both devices belong to the same photomos relays family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx. 1 µV) 5. Extremely low closed-circuit offset voltages to enable control of small analog signals without distortion 6. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side 7. Stable on resista.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQV234-NAiS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AQV234AZ
Manufacturer NAiS
File Size 40.96 KB
Description PhotoMOS RELAYS
Datasheet download datasheet AQV234AZ Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AQV234AZ featuring high sensitivity Panasonic
AQV234A featuring high sensitivity Panasonic
AQV234AX featuring high sensitivity Panasonic
AQV234 featuring high sensitivity Panasonic
AQV201 PhotoMOS RELAY Panasonic

Other Datasheets by NAiS

Part Number Description
AQV234A PhotoMOS RELAYS
AQV234AX PhotoMOS RELAYS
AQV234 PhotoMOS RELAYS
AQV210E PhotoMOS RELAY
AQV210EA PhotoMOS RELAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HS (High Sensitivity) Type [1-Channel (Form A) Type] PhotoMOS RELAYS 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.6±0.2 .142±.008 mm inch 16 25 34 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET 4. Low thermal electromotive force (Approx. 1 µV) 5. Extremely low closed-circuit offset voltages to enable control of small analog signals without distortion 6. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side 7. Stable on resistance to help simplify circuit design 8.