• Part: 20NP1006S
  • Description: N and P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 411.34 KB
20NP1006S Datasheet (PDF) Download
NCE Power Semiconductor
20NP1006S

Description

The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Key Features

  • N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
  • P-Channel VDS = -20V,ID = -6A RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • Pb free terminal plating
  • Halogen free Application