20NP1006S - N and P-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	20NP1006S
Manufacturer	NCE Power Semiconductor
File Size	411.34 KB
Description	N and P-Channel Enhancement Mode Power MOSFET
Datasheet	20NP1006S Datasheet
Additional preview pages of the 20NP1006S datasheet.

Product details

Description

The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.General

Features

N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V.
P-Channel VDS = -20V,ID = -6A RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.
Pb free terminal plating.
RoHS compliant.
Halogen free.

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Published: Nov 5, 2024 |