NCE Power Semiconductor NCE0102Z
The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NCE0102Z |
|---|---|
| Datasheet | NCE0102Z Download |
| Manufacturer |  NCE Power Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. D GGENERAL FEATURES
● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation S Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-92 view Package Marking and Ordering Information Device Marking Device Device Package 0102Z NCE0102Z TO-92 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 100 ±20 2 5 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/WELECTRICAL CHARACTERISTICS
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