Datasheet Summary
http://.ncepower.
Pb Free Product
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 100V,ID = 3A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram Marking and pin assignment
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