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NCE0103M - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V,ID = 3A RDS(ON).

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Datasheet Details

Part number NCE0103M
Manufacturer NCE Power Semiconductor
File Size 326.49 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0103M Datasheet

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http://www.ncepower.com Pb Free Product NCE0103M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.