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NCE0128D - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0128D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =28A RDS(ON) < 18mΩ @ VGS=10V(Typ:14 mΩ) Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number NCE0128D
Manufacturer NCE Power Semiconductor
File Size 380.61 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0128D Datasheet
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http://www.ncepower.com Pb Free Product NCE0128D NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0128D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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