NCE0128D
Description
The NCE0128D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS = 100V,ID =28A RDS(ON) < 18mΩ @ VGS=10V（Typ：14 mΩ） - Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
