NCE0170
Description
The NCE0170 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS = 100V,ID =70A RDS(ON) < 14mΩ @ VGS=10V (Typ:10.5mΩ) - Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
