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NCE01H29T - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of other applications.

Key Features

  • VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE01H29T
Manufacturer NCE Power Semiconductor
File Size 312.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01H29T Datasheet

Full PDF Text Transcription for NCE01H29T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE01H29T. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE01H29T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H29T uses advanced trench technology and design to prov...

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ption The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.

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