• Part: NCE01H29T
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 312.63 KB
Download NCE01H29T Datasheet PDF
NCE01H29T page 2
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NCE01H29T page 3
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NCE01H29T Key Features

  • VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V (Typ:2.4mΩ)
  • Good stability and uniformity with high EAS
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • DC motor drive
  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits