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NCE01P03S - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Key Features

  • VDS =-100V,ID =-3A RDS(ON).

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Datasheet Details

Part number NCE01P03S
Manufacturer NCE Power Semiconductor
File Size 346.54 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01P03S Datasheet

Full PDF Text Transcription for NCE01P03S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE01P03S. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to prov...

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ption The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.

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