NCE01P03S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

VDS =-100V,ID =-3A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE01P03S
Manufacturer	NCE Power Semiconductor
File Size	346.54 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01P03S Datasheet
Additional preview pages of the NCE01P03S datasheet.

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http://www.ncepower.com Pb Free Product NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.

Published: Jun 2, 2018 |