NCE01P30I - P-Channel Enhancement Mode Power MOSFET

Description

The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

VDS =-100V,ID =-30A RDS(ON).

NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NCE01P30I
Manufacturer	NCE Power Semiconductor
File Size	313.48 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01P30I Datasheet
Additional preview pages of the NCE01P30I datasheet.

📁 Similar Datasheet

NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)
NCE1570 - N-Channel 150V MOSFET (VBsemi)
NCE2025I - N-Channel MOSFET (VBsemi)
NCE2025S - N-Channel MOSFET (VBsemi)
NCE20H11 - N-Channel 20V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE01P30K - P-Channel Enhancement Mode Power MOSFET
NCE01P30L - P-Channel Enhancement Mode Power MOSFET
NCE01P03S - P-Channel Enhancement Mode Power MOSFET
NCE01P13 - P-Channel Enhancement Mode Power MOSFET
NCE01P13K - P-Channel Enhancement Mode Power MOSFET
NCE01P18 - P-Channel Enhancement Mode Power MOSFET
NCE01P18D - P-Channel Enhancement Mode Power MOSFET
NCE01P18K - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.

Published: Jun 2, 2018 |