Datasheet Summary
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Pb Free Product
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
（Typ：520mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
100% ∆Vds TESTED!
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