NCE0208IA Key Features
- VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Tape width
- Quantity