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NCE0208IA - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =200V,ID =8A RDS(ON).

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Datasheet Details

Part number NCE0208IA
Manufacturer NCE Power Semiconductor
File Size 287.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0208IA Datasheet

Full PDF Text Transcription for NCE0208IA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE0208IA. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE0208IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to prov...

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ption The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.