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NCE0218 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0218 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet preview – NCE0218

Datasheet Details

Part number NCE0218
Manufacturer NCE Power Semiconductor
File Size 295.38 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0218 Datasheet
Additional preview pages of the NCE0218 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0218 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0218 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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