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NCE0224F - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – NCE0224F

Datasheet Details

Part number NCE0224F
Manufacturer NCE Power Semiconductor
File Size 361.79 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0224F Datasheet
Additional preview pages of the NCE0224F datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0224F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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