NCE0224F
Description
The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
